Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing
نویسندگان
چکیده
منابع مشابه
Plasma Nitridation Optimization for Sub-15 Å Gate Dielectrics
The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 Å plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using XPS. It is shown that N-Si3 bonds are dominant in the ultra-thin plasma nitrided films, and that O2=...
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This thesis is broadly concerned with the electrical properties of MOS devices with thin (12 nm) nitrided oxide and reoxidized nitrided oxide gate dielectrics and specifically with the reliability and 1/f-noise properties of MOSFETs with such dielectrics. Nitrided oxides are formed by low pressure annealing of thermal silicon dioxide films in ammonia and reoxidized nitrided oxides are formed by...
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Ultrathin ( 1.9 nm) nitride/oxide (N/O) dual layer gate dielectrics have been prepared by the remote plasma enhanced chemical vapor deposition (RPECVD) of Si3N4 onto oxides. Compared to PMOSFET’s with heavily doped p-poly-Si gates and oxide dielectrics, devices incorporating the RPECVD stacked nitrides display reduced tunneling current, effectively no boron penetration and improved interface ch...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 1998
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.581291